1 of 9 optimum technology matching ? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. rf mems ldmos rva2007l analog controlled variable gain amplifier rfmd?s rva2007l is a fully integrated analog controlled variable gain amplifier featuring exceptional linearity over a greater than 20 db gain control range. this variable gain amplifier is controlled by a single 0 v to 3.3 v positive supply voltage. the rva2007l is packaged in a small 7 mm x 7 mm leadless laminate mcm which contains thermal vias for ultra low thermal resistance. this module is internally matched to 50 ?? and is easy to use with no external matching components required. features ? 1750 mhz to 2250 mhz operation ? gain = 24 db typical ? gain adjustment range > 20 db ? acpr > -66 dbc typ. at +12 dbm p out (dual carrier wcdma) ? small 7 mm x 7 mm, multi-chip module applications ? cellular, 3g infrastructure ? wibro, wimax, lte ? microwave radio ? high linearity power control ds101004 ? ? package: 7 mm x 7 mm rva2007lana- log controlled variable gain amplifier
2 of 9 rva2007l ds101004 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. absolute maximum ratings parameter rating unit max device current 770 ma max device voltage 5.5 v max control line voltage 6 v max rf input power* 25 dbm max junction temp (t j )+150c max storage temp +150 c thermal resistance (junction to backside of module) 14.8 c/w esd class 1c (1000 v min) *load condition: z l = 50 ? parameter specification unit condition min. typ. max. all specifications for -40 c to +85 c, 4.75 v to 5.25 v, and process variations unless otherwise stated. frequency 2110 2170 mhz temperature range -40 25 85 c operating range gain 23.5 24.5 25.5 db min attenuator setting, 5 v, 25 c gain 22 24.5 26.5 db over all conditions nominal operating output power 12 dbm operating power for acpr rating output ip3 42 45 48 dbm in high gain setting p1db 28 29.5 dbm max gain setting acpr -60 -66 -68 dbc dual carrier wcdma, 7.5 db cf at nominal operating power; over full attenuation range gain flatness 0.2 0.6 db over 50 mhz bw gain adjustment range 20 23.5 35 db control voltage range 0 3.3 v noise figure 3.8 5.0 db min attenuator setting impedance 50 ? input return loss 15 20 db over attenuation range output return loss 14 15 db over attenuation range supply voltage 4.75 5.0 5.25 v supply current (vpc = 0 v) 300 460 600 ma max current at -40 c supply current (vpc = 0 v) 120 126 140 ma output amplifier shutdown total current caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. rohs status based on eu directive 2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 9 rva2007l ds101004 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. parameter specification unit condition min. typ. max. all specifications for -40 c to +85 c, 4.75 v to 5.25 v, and process variations unless otherwise stated. frequency 1750 2250 mhz temperature range -40 25 85 c operating range gain 21.5 24.5 25.5 db min attenuator setting, 5 v, 25 c gain 20 24.5 26.5 db over all conditions nominal operating output power 12 dbm operating power for acpr rating output ip3 39 43 47 dbm in high gain setting p1db 28 29.5 dbm max gain setting acpr -60 -66 -68 dbc dual carrier wcdma, 7.5 db cf at nominal operating power; over full attenuation range gain flatness 0.2 0.9 db over 50 mhz bw gain adjustment range 20 23.5 35 db control voltage range 0 3.3 v noise figure 3.8 5.2 db min attenuator setting impedance 50 ? input return loss 10 20 db over attenuation range output return loss 9 15 db over attenuation range
4 of 9 rva2007l ds101004 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 9 rva2007l ds101004 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com.
6 of 9 rva2007l ds101004 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. pin function description 1 rfin rf input pin. internal dc-block. 2 gnd ground pin. 3 vpc power up/down control for 2nd stage amplifier. apply v cc to power on 2nd stage amplifier. apply 0 v to disable 2nd stage amplifier. do not exceed v cc + 0.5 v. connect to v cc if not needed. decoupling capacitor may be desired on application board for control line noise. 4nc no connection. 5vcc power supply for the module. recommending 1 ? f decoupling cap on the application board. 6 gnd ground pin. 7 rfout rf output pin. internal dc-block. 8 vctrl gain control voltage; 0 v to 3.3 v range. maximum gain at 0 v. recommending 0.1 ? f decoupling on the applica- tion board. center pad gnd center ground pads need to have a good thermal path on the application board. use solder stencil pattern shown in the document to define solder paste during assembly.
7 of 9 rva2007l ds101004 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. application schematic (without using final stage amplifier power down control) application schematic (using final stage amplifier power down control)
8 of 9 rva2007l ds101004 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. package drawing branding diagram
9 of 9 rva2007l ds101004 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. pcb design requirements note: this solder stencil pattern is required to prevent solder voiding that may impact thermal dissipation. ordering information ordering code description rva2007lsq sample bag with 25 pieces RVA2007LSR 7? reel with 100 pieces rva2007ltr7 7? reel with 1500 pieces rva2007ltr13 13? reel with 2500 pieces rva2007lpck-410 1750 mhz to 2250 mhz pcba with 5-piece sample bag
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